Page "Chemical vapor deposition" Paragraph 28

This reaction is usually performed in LPCVD systems, with either pure silane feedstock, or a solution of silane with 70 – 80 % nitrogen.

Temperatures between 600 and 650 ° C and pressures between 25 and 150 Pa yield a growth rate between 10 and 20 nm per minute.

An alternative process uses a hydrogen-based solution.

The hydrogen reduces the growth rate, but the temperature is raised to 850 or even 1050 ° C to compensate.