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Page "Chemical vapor deposition" ¶ 15
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** and CVD
** Atmospheric pressure CVD ( APCVD )CVD process at atmospheric pressure.
** Low-pressure CVD ( LPCVD )CVD process at sub-atmospheric pressures.
** Ultrahigh vacuum CVD ( UHVCVD )CVD process at very low pressure, typically below 10 < sup >− 6 </ sup > Pa (~ 10 < sup >− 8 </ sup > torr ).
** Aerosol assisted CVD ( AACVD ) – A CVD process in which the precursors are transported to the substrate by means of a liquid / gas aerosol, which can be generated ultrasonically.
** Direct liquid injection CVD ( DLICVD ) – A CVD process in which the precursors are in liquid form ( liquid or solid dissolved in a convenient solvent ).
** Plasma-Enhanced CVD ( PECVD )CVD process that utilizes plasma to enhance chemical reaction rates of the precursors.
** Remote plasma-enhanced CVD ( RPECVD ) – Similar to PECVD except that the wafer substrate is not directly in the plasma discharge region.
** Chemical vapor deposition ( CVD )
** Plasma enhanced CVD ( PECVD ) uses an ionized vapor, or plasma, as a precursor.
** Chemical vapor deposition ( CVD )

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