Gallium arsenide, the primary use of gallium, is used in microwave circuitry and infrared applications.

This technique is useful in measuring the minority carrier lifetime of III-V semiconductors like Gallium arsenide ( GaAs.

Gallium arsenide, indium phosphide, gallium antimonide, and gallium nitride are all examples of compound semiconductor materials that can be used to create junction diodes that emit light.

Gallium arsenide crystals are used in high-speed digital integrated circuits, optoelectronic integrated circuits, and solid state lasers.

Gallium arsenide –

# REDIRECT Gallium arsenide

* Gallium arsenide Photodiode, a material for light meters

The plant uses pHEMT technologies ( High electron mobility transistor ), using Gallium arsenide ( GaAs ) and Gallium nitride ( GaN ).

Gallium arsenide Gunn diodes are made for frequencies up to 200 GHz, gallium nitride materials can reach up to 3 terahertz.

** Gallium arsenide

# REDIRECT Gallium arsenide

Gallium indium arsenide ( GaInAs ) is an alternative name for InGaAs.

On its perch at the end of the RMS over night, WSF was able to grow 2 Gallium Arsenide ( GaAs ) thin films.

USML-2 Experiments included: the Surface Tension Driven Convection Experiment ( STDCE ), the Drop Physics Module, the Drop Dynamics Experiment ; the Science and Technology of Surface-Controlled Phenomena experiment ; the Geophysical Fluid Flow Cell Experiment ; the Crystal Growth Furnace, the Orbital Processing of High Quality Cadmium Zinc Telluride Compound Semiconductors experiment ; the Study of Dopant Segregation Behavior During the Crystal Growth of Gallium Arsenide ( GaAs ) in Microgravity experiment ; the Crystal Growth of Selected II-VI Semiconducting Alloys by Directional Solidification experiment ; the Vapor Transport Crystal Growth of Mercury Cadmium Tellurida in Microgravity experiment ; the Zeolite Crystal Growth Furnace ( ZCG ), the Interface Configuration Experiment ( ICE ), the Oscillatory Thermocapillary Flow Experiment ; the Fiber Supported Droplet Combustion Experiment ; the Particle Dispersion Experiment ; the Single-Locker Protein Crystal Growth experiment ; ( including the Protein Crystallization Apparatus for Microgravity ( PCAM ) and the Diffusion-controlled Crystallization Apparatus for Microgravity ( DCAM )); the Crystal Growth by Liquid-Liquid Diffusion, the Commercial Protein Crystal Growth experiment ; the Advanced Protein Crystallization Facility, Crystallization of Apocrystacyanin C experiment ; Crystal Structure Analysis of the Bacteriophage Lambda Lysozyme, Crystallization of RNA Molecules Under Microgravity Conditions experiment ; Crystallization of the Protein Grb2 and Triclinic Lysozyme experiment ; Microgravity Crystallization of Thermophilic Aspartyl-tRNA Synthetase and Thaumatin experiment ; Crystallization in a Microgravity Environment of CcdB experiment ; A Multivariate Analysis of X-ray Diffraction Data Obtained from Glutathione S Transferase experiment ; Protein Crystal Growth: Light-driven Charge Translocation Through Bacteriorhodopsin experiment ; Crystallization of Ribosome experiment ; Crystallization of Sulfolobus Solfataricus Alcohol Dehydrogenase experiment ; Crystallization of Turnip Yellow Mosaic Virus, Tomato Aspermy Virus, Satellite Panicum Mosaic Virus, Canavalin, Beef Liver Catalase, Concanavalin B experiment ; Crystallization of the Epidermal Growth Factor ( EGF ); Structure of the Membrane-Embedded Protein Complex Photosystem I ; Crystallization of Visual Pigment Rhodopsin ; Commercial Generic Bioprocessing Apparatus ; Astroculture Facility and Experiment.

Gallium oxide is less volatile than silica ( the main constituent of tektites ) and germanium oxide is more volatile.

The Rankine temperature scale was created to use degree intervals the same size as those of the Fahrenheit scale, such that a temperature difference of one degree Rankine ( 1 R ) is equal to a difference of 1 ° F, except that absolute zero is 0 R – the same way that the Kelvin temperature scale matches the Celsius scale, except that absolute zero is 0 K. The Fahrenheit scale uses ( in the same manner as the later Celsius scale ) the symbol ° to denote a point on the temperature scale and the letter F to indicate the use of the Fahrenheit scale ( e. g. " Gallium melts at 85. 5763 ° F "), as well as to denote a difference between temperatures or an uncertainty in temperature ( e. g. " The output of the heat exchanger experiences an increase of 72 ° F " and " Our standard uncertainty is ± 5 ° F ").

Gallium ( ) is a chemical element with symbol Ga and atomic number 31.

Gallium metal expands by 3. 1 % when it solidifies, and therefore storage in either glass or metal containers is avoided, due to the possibility of container rupture with freezing.

Gallium is one of the metals ( with caesium, rubidium, mercury and likely francium ) which are liquid at or near normal room temperature, and can therefore be used in metal-in-glass high-temperature thermometers.

Some materials such as Gallium Arsenide have an effective electron affinity that is below the level of the conduction band.

Gallium is found in the earth with an abundance of 13 ppm.

In SPECT imaging, the patient is injected with a radioisotope, most commonly Thallium 201TI, Technetium 99mTC, Iodine 123I, and Gallium 67Ga

Gallium, notably, is sourced mainly from bauxite, an aluminum hydroxide ore in which gallium ion substitutes for chemically similar aluminum.

Gallium Nitride ( GaN ) is also an option for MMICs.

* Gallium is discovered spectroscopically by French chemist Paul Emile Lecoq de Boisbaudran.

Gallium nitride ( GaN ) is used to make blue LEDs and lasers.

Gallium or lead is used in special high UV-A models for printing purposes.

Currently support for ATI hardware is provided by the radeon driver, with the majority of cards being supported by either the R300g or R600g Gallium 3D drivers.

* Gallium nitride based diodes have been used for operation with ultraviolet light.

Gallium ion implantion can be used as etch mask in cryo-DRIE.

Gallium has no known role in biology.

Dark-Red Gallium Selenide in its bulk form.

* GaP, Gallium ( III ) phosphide, a semiconductor material

Additionally, because VCSELs emit the beam perpendicular to the active region of the laser as opposed to parallel as with an edge emitter, tens of thousands of VCSELs can be processed simultaneously on a three inch Gallium Arsenide wafer.

Additionally, because VCSELs emit the beam perpendicular to the active region of the laser as opposed to parallel as with an edge emitter, tens of thousands of VCSELs can be processed simultaneously on a three inch Gallium Arsenide wafer.

Gallium shares the higher-density liquid state with only a few materials like silicon, germanium, bismuth and water.

Gallium, for example, diffuses into the grain boundaries of Al / Zn alloys or steel, making them very brittle.

Gallium nitride and indium gallium nitride, minority semiconductor uses, produce blue and violet light-emitting diodes ( LEDs ) and diode lasers.

Gallium attacks most other metals by diffusing into their metal lattice.

The unique melting point of Gallium allows it to melt in one's hand, and then refreeze if removed.

Otherwise, metallic bonding can be very strong, even in molten metals, such as Gallium.

This internal standard consists primarily of deionized water, with nitric or hydrochloric acid, and Indium and / or Gallium.