* Carbon nanotube

* Carbon nanotube

** Carbon nanotube field-effect transistor ( CNFET )

# REDIRECT Carbon nanotube

# REDIRECT Carbon nanotube

* Carbon nanotube, an allotrope of carbon with a cylindrical nanostructure

* Carbon nanotube

Carbon nanotube –

Carbon nanotube conductive coatings are a prospective replacement.

* Carbon nanotube

# REDIRECT Carbon nanotube

# REDIRECT Carbon nanotube

# redirect Carbon nanotube # Single-walled

# redirect Carbon nanotube # Multi-walled

# REDIRECT Carbon nanotube

* Carbon nanotube

* Carbon nanotube

# REDIRECT Carbon nanotube

* Carbon nanotube

Cees Dekker's lab at TU Delft demonstrated in 1998 the first transistor made out of single nanotube molecule.

* April 30-Scientists from the University of California at Irvine announce the first high-speed transistor made from a carbon nanotube, operating at microwave frequencies.

The technologically most important thin amorphous film is probably represented by few nm thin SiO < sub > 2 </ sub > layers serving as isolator above the conducting channel of a metal-oxide semiconductor field-effect transistor ( MOSFET ).

High-power N-channel field-effect transistor

The field-effect transistor ( FET ) is a transistor that uses an electric field to control the shape and hence the conductivity of a channel of one type of charge carrier in a semiconductor material.

The field-effect transistor was first patented by Julius Edgar Lilienfeld in 1925 and by Oskar Heil in 1934, but practical semi-conducting devices ( the JFET ) were only developed much later after the transistor effect was observed and explained by the team of William Shockley at Bell Labs in 1947.

* The ISFET ( ion-sensitive field-effect transistor ) used to measure ion concentrations in a solution ; when the ion concentration ( such as H < sup >+</ sup >, see pH electrode ) changes, the current through the transistor will change accordingly.

* The JFET ( junction field-effect transistor ) uses a reverse biased p-n junction to separate the gate from the body.

* Chemical field-effect transistor

* Organic field-effect transistor ( OFET )

Lilenfeld patented a device resembling a modern field-effect transistor, but it was not practical.

Physicist Julius Edgar Lilienfeld filed a patent for a field-effect transistor ( FET ) in Canada in 1925, which was intended to be a solid-state replacement for the triode.

According to Lillian Hoddeson and Vicki Daitch, authors of a biography of John Bardeen, Shockley had proposed that Bell Labs ' first patent for a transistor should be based on the field-effect and that he be named as the inventor.

Having unearthed Lilienfeld ’ s patents that went into obscurity years earlier, lawyers at Bell Labs advised against Shockley's proposal since the idea of a field-effect transistor which used an electric field as a “ grid ” was not new.

For a field-effect transistor, the terminals are labeled gate, source, and drain, and a voltage at the gate can control a current between source and drain.

The field-effect transistor ( FET ), sometimes called a unipolar transistor, uses either electrons ( in N-channel FET ) or holes ( in P-channel FET ) for conduction.

** FREDFET, fast-reverse epitaxial diode field-effect transistor

*** DNAFET, deoxyribonucleic acid field-effect transistor

The solid-state device which operates most like the pentode tube is the junction field-effect transistor ( JFET ), although vacuum tubes typically operate at over a hundred volts, unlike most semiconductors in most applications.

The metal – oxide – semiconductor field-effect transistor ( MOSFET, MOS-FET, or MOS FET ) is a transistor used for amplifying or switching electronic signals.