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The field-effect transistor was first patented by Julius Edgar Lilienfeld in 1925 and by Oskar Heil in 1934, but practical semi-conducting devices ( the JFET ) were only developed much later after the transistor effect was observed and explained by the team of William Shockley at Bell Labs in 1947.
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field-effect and transistor
The technologically most important thin amorphous film is probably represented by few nm thin SiO < sub > 2 </ sub > layers serving as isolator above the conducting channel of a metal-oxide semiconductor field-effect transistor ( MOSFET ).
High-power N-channel field-effect transistor
The field-effect transistor ( FET ) is a transistor that uses an electric field to control the shape and hence the conductivity of a channel of one type of charge carrier in a semiconductor material.
* CNTFET ( Carbon nanotube field-effect transistor )
* The ISFET ( ion-sensitive field-effect transistor ) used to measure ion concentrations in a solution ; when the ion concentration ( such as H < sup >+</ sup >, see pH electrode ) changes, the current through the transistor will change accordingly.
* The JFET ( junction field-effect transistor ) uses a reverse biased p-n junction to separate the gate from the body.
* Chemical field-effect transistor
* Organic field-effect transistor ( OFET )
Lilenfeld patented a device resembling a modern field-effect transistor, but it was not practical.
Physicist Julius Edgar Lilienfeld filed a patent for a field-effect transistor ( FET ) in Canada in 1925, which was intended to be a solid-state replacement for the triode.
According to Lillian Hoddeson and Vicki Daitch, authors of a biography of John Bardeen, Shockley had proposed that Bell Labs ' first patent for a transistor should be based on the field-effect and that he be named as the inventor.
Having unearthed Lilienfeld ’ s patents that went into obscurity years earlier, lawyers at Bell Labs advised against Shockley's proposal since the idea of a field-effect transistor which used an electric field as a “ grid ” was not new.
For a field-effect transistor, the terminals are labeled gate, source, and drain, and a voltage at the gate can control a current between source and drain.
The field-effect transistor ( FET ), sometimes called a unipolar transistor, uses either electrons ( in N-channel FET ) or holes ( in P-channel FET ) for conduction.
** Carbon nanotube field-effect transistor ( CNFET )
** FREDFET, fast-reverse epitaxial diode field-effect transistor
*** DNAFET, deoxyribonucleic acid field-effect transistor
The solid-state device which operates most like the pentode tube is the junction field-effect transistor ( JFET ), although vacuum tubes typically operate at over a hundred volts, unlike most semiconductors in most applications.
The metal – oxide – semiconductor field-effect transistor ( MOSFET, MOS-FET, or MOS FET ) is a transistor used for amplifying or switching electronic signals.
field-effect and was
The basic principle of the field-effect transistor was first patented by Julius Edgar Lilienfeld in 1925.
However, the foundation that made National successful was its expertise in analogue electronics, TTL ( transistor – transistor logic ) and MOSFET ( metal-oxide-semiconductor field-effect transistor ) integrated circuit technologies.
The device structure was referred to as a ‘ V-groove MOSFET device with the drain region replaced by a p-type Anode Region ’ in this paper and subsequently as the insulated-gate rectifier ( IGR ), the insulated-gate transistor ( IGT ), the conductivity-modulated field-effect transistor ( COMFET ) and " bipolar-mode MOSFET ".
Specific organic materials can conduct electrical currents, and in a so-called field-effect transistor ( a refined implementation of the transistor effect, which was pioneered in 1947 in the same laboratory ) the conductance can be switched on or off, a basic function in the field of electronics.
The field-effect transistor ( FET ) was first proposed by J. E.
The first field-effect transistor was designed and prepared in 1960 by Kahng and Atalla using a metal-oxide-semiconductor ( MOSFET ).
field-effect and first
One useful application of SWNTs is in the development of the first intermolecular field-effect transistors ( FET ).
In the mid-1970s the first calculators appeared with field-effect, Twisted Nematic TN LCDs with dark numerals against a grey background, though the early ones often had a yellow filter over them to cut out damaging ultraviolet rays.
In 1987, Koezuka and co-workers reported the first organic field-effect transistor based on a polymer of thiophene molecules.
In 2003, a German group reported the first organic light-emitting field-effect transistor ( OLET ).
field-effect and patented
In 1934, Oskar Heil patented a field-effect transistor.
field-effect and by
In virtually every type of contemporary chip implementation of digital systems, the bipolar transistors have been replaced by complementary field-effect transistors ( MOSFETs ) to reduce size and power consumption still further, thereby resulting in complementary metal – oxide – semiconductor ( CMOS ) logic.
The switching state of the field-effect transistor is controlled by the voltage on the control gate of the transistor.
In the early 1960s, Fairchild R & D began development of MOSFET ( metal – oxide – semiconductor field-effect transistor ) technology, which had been pioneered by RCA and Bell Labs.
A thin-film transistor ( TFT ) is a special kind of field-effect transistor made by depositing thin films of a semiconductor active layer as well as the dielectric layer and metallic contacts over a supporting substrate.
Further, the label-free and direct electrical detection of small peptides and proteins is possible by their intrinsic charges using biofunctionalized ion-sensitive field-effect transistors.
The VCR is one of the numerous interesting circuit elements that can be produced by using a JFET ( junction field-effect transistor ) with simple biasing.
field-effect and devices
The most modern electrometers consist of a solid state amplifier using one or more field-effect transistors, connections for external measurement devices, and usually a display and / or data-logging connections.
Moreover, silicon-based junction gate field-effect transistors ( JFET ) will degrade below temperatures of roughly and eventually cease to function or " freeze out " at since the silicon ceases to be semiconducting so using extremely cold coolants may cause devices to fail.
Generally this means that high current circuits use metal – oxide – semiconductor field-effect transistor ( MOSFETs ) for efficient control, and portions of specialized very high performance circuits use bipolar devices.
Potential applications include field-effect transistors, electroluminescent devices, solar cells, photochemical resists, nonlinear optic devices, batteries, diodes, and chemical sensors.
In 2008, researchers of AMICA and University of Manchester demonstrated a new switching effect in graphene field-effect devices.
Rigid-backbone organic semiconductors are now-used as active elements in optoelectronic devices such as organic light-emitting diodes ( OLED ), organic solar cells, organic field-effect transistors ( OFET ), electrochemical transistors and recently in biosensing applications.
Subsequently, he optimized the design and performance of the CNT field-effect transistors, enabling them to outperform silicon devices.
The effect is known as a Mott transition and can be used to build smaller field-effect transistors, switches and memory devices than possible with conventional materials.
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