* Sony History – The Esaki Diode.

** Light-Emitting Diode – converts electrical power into incoherent light

** Laser Diode – converts electrical power into coherent light

Diode –

# redirect Diode – transistor logic

* Diode – transistor logic ( DTL )

* DIAC ( Diode for Alternating Current ), Trigger Diode, SIDAC ) – Often used to trigger an SCR

* British Transistor Diode & Semiconductor Devices Annual 1962 – 63 ( with J. Mackenzie-Robertson ) ( Pergamon 1962 )

* Diode logic, a logic family using diodes

* Diode logic

Diode logic goes back as far as ENIAC and was used in many early vacuum tube computers.

* The FREDFET ( Fast Reverse or Fast Recovery Epitaxial Diode FET ) is a specialized FET designed to provide a very fast recovery ( turn-off ) of the body diode.

The canon that is chanted on these days is a " Triode ", i. e., composed of three odes instead of the usual nine odes ( the canon of Holy and Great Tuesday is a " Diode ", having only two odes ).

The SIDAC, or Silicon Diode for Alternating Current, is another member of the thyristor family.

Outside the field of analytical chemistry, e. g. when used with the Tunable Diode Laser Absorption Spectroscopy ( TDLAS ) technique, the absorbance is often defined using the natural logarithm instead of the common logarithm, i. e. as

The colored lighting is accomplished with a Light Emitting Diode lighting system.

The latter is obtained by means of operating the Single Photon Avalanche Diode ( SPAD ) detector in Time Correlated Single Photon Counting ( TCSPC ) mode.

* Diode, a device that is a two-terminal electronic component that conducts electric current in only one direction. Otherwise known as a oneway check valve.

* BA-series silicon low-power / signal diodes ( e. g.: BAT18 Silicon RF Switching Diode )

In optics, an equivalent device for the diode but with laser light would be the Optical isolator, also known as an Optical Diode, that allows light to only pass in one direction.

Both stages of concentration are included on the same GDX ( Gated Diode Access ) board.

Diode lasers have also found many applications in laser absorption spectrometry ( LAS ) for high-speed, low-cost assessment or monitoring of the concentration of various species in gas phase.

Diode lasers can be used in a great many fields ; since light has many different properties ( power, wavelength, spectral and beam quality, polarization, etc.

Diode lasers of that era operated with threshold current densities of 1000 A / cm < sup > 2 </ sup > at 77 K temperatures.

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The Sony DCR-TRV730 / 828 / 830 ( and the later DCR-TRV740 / 840 ), were the only Digital8 camcorders to be built with a 1 / 4. 7 " ( 4. 5mm ) with advanced HAD ( Hole Accumulation Diode ) CCD.

* Resonant Tunneling Diode Simulation Tool on Nanohub enables the simulation of resonant tunneling diodes under realistic bias conditions for realistically extended devices.

Eccles invented the term Diode to describe an evacuated glass tube containing two electrodes ; an anode and a cathode.

* 1955 – Tokyo Telecommunications Engineering, the precursor to Sony, sells its first transistor radios in Japan.

* 1947 – William Shockley, John Bardeen and Walter Brattain build the first practical point-contact transistor.

* Single-ended output stages ( be they tube or transistor ) have an asymmetrical transfer function, meaning that even order harmonics in the created distortion tend not to be canceled ( as they are in push – pull output stages ); by using tubes OR FETs most of the distortion is from the square law transfer characteristic and so second-order, which some consider to be " warmer " and more pleasant.

I – V characteristics and output plot of a JFET n-channel transistor.

His citation reads: " Theoretical physicist John Bardeen ( 1908 – 1991 ) shared the Nobel Prize in Physics twice -- in 1956, as co-inventor of the transistor and in 1972, for the explanation of superconductivity.

* 1948 – William Shockley files the original patent for the grown junction transistor, the first bipolar junction transistor.

* 1951 – William Shockley announces the invention of the junction transistor.

* 1947 – American scientists John Bardeen and Walter Brattain observe the basic principles of the transistor, a key element for the electronics revolution of the 20th Century.

File: Bardeen. jpg | John Bardeen ( 1908 – 1991 ): awarded Nobel Prize in Physics in 1956 with William Shockley and Walter Brattain for the invention of the transistor and again in 1972 with Leon Cooper and John Robert Schrieffer for a fundamental theory of conventional superconductivity known as the BCS theory.

Initially manufactured of small-scale Transistor – transistor logic, a single-board large scale integration version of the processor was developed in 1975.

He went on to create his own designs based on his knowledge of transistor – transistor logic and Bushnell's game.

This construction produces two p-n junctions: a base – emitter junction and a base – collector junction, separated by a thin region of semiconductor known as the base region ( two junction diodes wired together without sharing an intervening semiconducting region will not make a transistor ).

** Multiple-emitter transistor, used in transistor – transistor logic

Walter Houser Brattain ( February 10, 1902 – October 13, 1987 ) was an American physicist at Bell Labs who, along with John Bardeen and William Shockley, invented the transistor.

* July 5 – William Shockley, John Bardeen, and Walter Brattain announce the invention of the junction transistor.

* June 26 – William Shockley files the original patent for the grown junction transistor, the first bipolar junction transistor.

The metal – oxide – semiconductor field-effect transistor ( MOSFET, MOS-FET, or MOS FET ) is a transistor used for amplifying or switching electronic signals.