silicon

* Shrinking everything ( a " photomask shrink "), resulting in the same number of transistors on a smaller die, improves performance ( smaller transistors switch faster ), reduces power ( smaller wires have less parasitic capacitance ) and reduces cost ( more CPUs fit on the same wafer of silicon ).

* To give lower system cost, peripherals are integrated with the processor on the same silicon chip.

The silicon cost of an 8051 is now as low as US $ 0. 001, because some implementations use as few as 2, 200 logic gates and take 0. 0127 square millimeters of silicon.

Examples include calcium carbide, silicon carbide, tungsten carbide ( often called simply carbide ), and cementite, each used in key industrial applications.

The carbides of silicon and boron are described as " covalent carbides ", although virtually all compounds of carbon exhibit some covalent character.

Both silicon carbide ( also known as carborundum ) and boron carbide are very hard materials and refractory.

Deep level transient spectroscopy has been used for studying the electrical activity of dislocations in semiconductors, mainly silicon.

Several non-diamond materials, which include cubic zirconia and silicon carbide and are often called diamond simulants, resemble diamond in appearance and many properties.

Today most diodes are made of silicon, but other semiconductors such as germanium are sometimes used.

The crystal detector was developed into a practical device for wireless telegraphy by Greenleaf Whittier Pickard, who invented a silicon crystal detector in 1903 and received a patent for it on November 20, 1906.

Normal ( p – n ) diodes, which operate as described above, are usually made of doped silicon or, more rarely, germanium.

Before the development of silicon power rectifier diodes, cuprous oxide and later selenium was used ; its low efficiency gave it a much higher forward voltage drop ( typically 1. 4 to 1. 7 V per " cell ", with multiple cells stacked to increase the peak inverse voltage rating in high voltage rectifiers ), and required a large heat sink ( often an extension of the diode ’ s metal substrate ), much larger than a silicon diode of the same current ratings would require.

* BA-series silicon low-power / signal diodes ( e. g.: BAT18 Silicon RF Switching Diode )

* BY-series silicon rectifier diodes ( e. g.: BY127 1250V, 1A rectifier diode )

* BZ-series silicon Zener diodes ( e. g.: BZY88C4V7 4. 7V Zener diode )

* Thyristor or silicon controlled rectifier ( SCR )

Germanium and silicon are common materials.

A diode can be used as a temperature measuring device, since the forward voltage drop across the diode depends on temperature, as in a silicon bandgap temperature sensor.

Most diodes therefore have a negative temperature coefficient, typically − 2 mV /˚ C for silicon diodes at room temperature.

Distillation of chlorosilanes also enables the production of high-purity silicon for use as a semiconductor.

For example, the density of water increases between its melting point at 0 ° C and 4 ° C ; similar behavior is observed in silicon at low temperatures.

All channels share a 10 cm telescope, which uses a silicon carbide mirror.

Microelectronic components are created by chemically fabricating wafers of semiconductors such as silicon ( at higher frequencies, compound semiconductors like gallium arsenide and indium phosphide ) to obtain the desired transport of electronic charge and control of current.