* 1866 – Giovanni Agnelli, Italian businessman, founded Fiat S. p. A ( d. 1945 )

* Hatfield, Mark O., with the Senate Historical Office, Vice Presidents of the United States, 1789 – 1993 .( U. S. Government Printing Office, 1997 ), p. 219

* Jürgen Klötgen, Prieuré d ' Abergavenny – Tribulations mancelles en Pays de Galles au temps du Pape Jean XXII ( d ' après des documents français et anglais du XIV ° siècle collationnés avec une source d ' histoire retrouvée aux Archives Secrètes du Vatican ), in Revue Historique et Archéologique du Maine, Le Mans, 1989, p. 65 – 88 ( 1319: cf John of Hastings, Lord of Abergavenny ; Adam de Orleton, Bishop of Hereford, John of Monmouth, Bishop of Llandaff ).

Jenkinson's book ( p. 374 – 375 ) lists 78 foul balls near the foul pole in Ruth's career, claiming that at least 50 of them were likely to have been home runs under the modern rule.

Their 12: 30-1: 15 p. m. Monday – Friday broadcasts became a veritable institution in the region.

( Blackwell, 1991, p. 127 – 128 ) Galileo agreed.

According to Emile Benveniste ( 1954 ), the earliest written occurrence in English of civilisation in its modern sense may be found in Adam Ferguson's An Essay on the History of Civil Society ( Edinburgh, 1767 – p. 2 ): " Not only the individual advances from infancy to manhood, but the species itself from rudeness to civilisation.

For the re-reading by Benjamin Hudson, see Woolf, Pictland to Alba, pp. 127 – 129 and 152 – 157 ; Dumville, " Chronicle of the Kings of Alba ", p. 77.

There are several types of p – n junction diodes, which either emphasize a different physical aspect of a diode often by geometric scaling, doping level, choosing the right electrodes, are just an application of a diode in a special circuit, or are really different devices like the Gunn and laser diode and the MOSFET:

Normal ( p – n ) diodes, which operate as described above, are usually made of doped silicon or, more rarely, germanium.

The vast majority of all diodes are the p – n diodes found in CMOS integrated circuits, which include two diodes per pin and many other internal diodes.

This occurs when the reverse electric field across the p – n junction causes a wave of ionization, reminiscent of an avalanche, leading to a large current.

: This term is used both for conventional p – n diodes used to monitor temperature due to their varying forward voltage with temperature, and for Peltier heat pumps for thermoelectric heating and cooling .. Peltier heat pumps may be made from semiconductor, though they do not have any rectifying junctions, they use the differing behaviour of charge carriers in N and P type semiconductor to move heat.

They have a lower forward voltage drop than p – n junction diodes.

Schottky diodes are majority carrier devices and so do not suffer from minority carrier storage problems that slow down many other diodes — so they have a faster reverse recovery than p – n junction diodes.

They also tend to have much lower junction capacitance than p – n diodes, which provides for high switching speeds and their use in high-speed circuitry and RF devices such as switched-mode power supply, mixers, and detectors.

: Super barrier diodes are rectifier diodes that incorporate the low forward voltage drop of the Schottky diode with the surge-handling capability and low reverse leakage current of a normal p – n junction diode.

Gold-doped diodes are faster than other p – n diodes ( but not as fast as Schottky diodes ).

They also have less reverse-current leakage than Schottky diodes ( but not as good as other p – n diodes ).

Their p – n junctions have a much larger cross-sectional area than those of a normal diode, allowing them to conduct large currents to ground without sustaining damage.

* 2003 – The Spanish police thwart an attempt by ETA to detonate 50 kg of explosives at 3: 55 p. m. inside Madrid's busy Chamartín Station.

The 2006 " Days of Syn " was on 26 – 28 August ( UK August Bank Holiday weekend ) and featured a talk on Dr. Syn at the Anglican church at 6: 30 p. m. On Sunday at 3 p. m. there was a church service where Dr. Syn and the cast appeared in period costume.

A point like p gets information directly from n, but all information beyond n is indirectly relayed through n.

In number theory, if P ( n ) is a property of positive integers, and if p ( N ) denotes the number of positive integers n less than N for which P ( n ) holds, and if

If denotes the quantum state of a particle ( n ) with momentum p, spin J whose component in the z-direction is σ, then one has

N. p., n. d.

Ackermann's original three-argument function is defined recursively as follows for nonnegative integers m, n, and p:

* For a finite field of prime order p, the algebraic closure is a countably infinite field which contains a copy of the field of order p < sup > n </ sup > for each positive integer n ( and is in fact the union of these copies ).

The fundamental theorem of arithmetic states that any positive integer n can be represented uniquely as a product of powers of primes: where p < sub > 1 </ sub > < p < sub > 2 </ sub > < ... < p < sub > k </ sub > are primes and the a < sub > j </ sub > are positive integers.

Define ν < sub > p </ sub >( n ) as the exponent of the highest power of the prime p that divides n. I. e.

if p is one of the p < sub > i </ sub > then ν < sub > p </ sub >( n )

where n > 1 is an integer and p, q, and r are prime numbers, then 2 < sup > n </ sup >× p × q and 2 < sup > n </ sup >× r are a pair of amicable numbers.

An IGBT cell is constructed similarly to a n-channel vertical construction power MOSFET except the n + drain is replaced with a p + collector layer, thus forming a vertical PNP bipolar junction transistor.

This additional p + region creates a cascade connection of a PNP bipolar junction transistor with the surface n-channel MOSFET.

Therefore, when p-type and n-type silicon are put into contact – called a p – n junction – electrons will spontaneously flow from the n-type to the p-type.

Using a tunnel junction ( n < sup >+</ sup > p < sup >+</ sup >), an electrically advantageous n-n < sup >+</ sup > p < sup >+</ sup >- p-i-n configuration can be built that also may beneficially influence other structural elements ( e. g. in the form of a Buried Tunnel Junction ( BTJ )).

The largest differences between a Schottky barrier and a p – n junction are its typically lower junction voltage, and decreased ( almost nonexistent ) depletion width in the metal.

These diodes have a heavily doped p – n junction only some 10 nm ( 100 Å ) wide.

Under normal forward bias operation, as voltage begins to increase, electrons at first tunnel through the very narrow p – n junction barrier because filled electron states in the conduction band on the n-side become aligned with empty valence band hole states on the p-side of the p-n junction.

As voltage increases yet further, the diode begins to operate as a normal diode, where electrons travel by conduction across the p – n junction, and no longer by tunneling through the p – n junction barrier.

In a conventional semiconductor diode, conduction takes place while the p – n junction is forward biased and blocks current flow when the junction is reverse biased.

A silicon p – n junction with no applied voltage.

A p – n junction is formed at the boundary between a p-type and n-type semiconductor created in a single crystal of semiconductor by doping, for example by ion implantation, diffusion of dopants, or by epitaxy ( growing a layer of crystal doped with one type of dopant on top of a layer of crystal doped with another type of dopant ).